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Researchers create transistors out of nanowire forests, for ‘ultimate scaling’ beyond 10nm . By John Hewitt on May 1, 2013 at 2:00 pm | 3 Comments . Top contact Gate Bottom contact . TSMC announces its first 16nm FinFET networking chip: 32-core ARM Cortex-A57 . By Joel Hruska on September 26, 2014 at 9:10 am | 23 comments

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FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability Abstract: Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools.

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Author information: (1)TSMC, Leuven, Belgium. We report the capability to simulate in a quantum-mechanical atomistic fashion record-large nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 nm.

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Nanowire photodetector and image sensor with internal gain Issued May 5, 2015 United States 9,024,295 Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

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May 15, 2019 · In the mobile SoC market, TSMC is moving fast when it comes to introducing new manufacturing process nodes. The Taiwanese fab is expected to mass produce its 5nm process next year, which on the ... Author information: (1)TSMC, Leuven, Belgium. We report the capability to simulate in a quantum-mechanical atomistic fashion record-large nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 nm.

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